Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

Double perovskite, Cs2AgBiBr6, is introduced as a lead-free perovskite solar cell. Device modeling of Cs2AgBiBr6 (DP) was accomplished to obtain the optimum parameters using Solar Cell Capacitance Simulator (SCAPS). Two devices with two different hole transport layers (HTLs) were investigated, including P3HT and Cu2O. For both HTLs, an optimal thicknesses 1200 nm defect densities $$1.0\times$$ 1014 cm?3 for DP layer attained. conduction band offset, CBO, ? 0.21 eV valence VBO, + 0.16 eV. shallow acceptor doping concentration Cu2O, values $$5.0\times {10}^{19}$$ {10}^{17}\,{\mathrm{cm}}^{-3}$$ obtained, respectively. As far donor density electron (ETLs) concerned, cases, value $$5.0\times$$ 1019 achieved. capture cross section, $${\sigma }_{n,p}$$ , in absorber at }_{n,p} \mathrm{of} {10}^{-20}\, {\mathrm{cm}}^{2}$$ $${N}_{t,DP} ($$ DP) $$\mathrm{is} {10}^{16} \,{\mathrm{cm}}^{-3}$$ {10}^{-19} \,{\mathrm{cm}}^{2}$$ $${N}_{t,DP}\mathrm{ is} {10}^{15} \,{\mathrm{cm}}^{-3},$$ {10}^{-18} {10}^{14} {10}^{-17}\, {10}^{13}\, {\mathrm{cm}}^{-3}$$ {10}^{-16} {10}^{12} . device, interface P3HT/Cs2AgBiBr6 occurred 1.0 $$\times$$ cm?2, Cs2AgBiBr6/SnO2 happened 109 cm?2. Cu2O Cu2O/Cs2AgBiBr6 befallen 1013 1010 radiative recombination, 2.3 10?13 cm3/s, however, device 10?12 cm3/s. Finally, maximum power conversion efficiency, PCE, 11.69% (open-circuit voltage, Voc, 2.02 V, short-circuit current density, Jsc, 6.39 mA/cm2, fill-factor, FF, 0.90 (90%)) achieved, PCE 11.32% (Voc 1.97 Jsc FF 0.895 (89.5%)) This highest efficiency double cell which achieved till now. our results are providing towards fabricating inorganic